Optical behaviour of ion beam sputtered a-Si thin films

Semiconductor Science and Technology

Volumn 23, Issue 10, 2008, Pages

  Kumar, Koppolu Uma Mahendra ^a   Krishna, M Ghanashyam ^a  

^a UNIVERSITY OF HYDERABAD   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; BEAM PLASMA INTERACTIONS; BOROSILICATE GLASS; ENERGY GAP; GALLIUM ALLOYS; ION BEAMS; ION BOMBARDMENT; IONS; OPTICAL CONSTANTS; OPTICAL PROPERTIES; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLIDS; SPUTTERING; THICK FILMS; THIN FILMS;

AMBIENT TEMPERATURES; AMORPHOUS SILICON THIN FILMS; BAND GAPS; BOND ANGLES; BOROSILICATE GLASS SUBSTRATES; ION BEAM SPUTTERING; NARROW BAND GAPS; OPTICAL BEHAVIOURS; PHOTOVOLTAIC APPLICATIONS; RAMAN PEAKS; RAMAN SPECTRUMS; SPECTRAL TRANSMITTANCES;

AMORPHOUS FILMS;

EID: 56349140655     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/10/105020     Document Type: Article

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