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Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

The structure and morphology of (112)-oriented Cu (In,Ga) Se2 epitaxial films

(2) Liao, Dongxiang a Rockett, Angus a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ELEMENTS; EPITAXIAL FILMS; GALLIUM; GALLIUM ALLOYS; MATERIALS PROPERTIES; MOLECULAR BEAM EPITAXY; NEGATIVE IONS; POSITIVE IONS; SUBSTRATES; SURFACE CHEMISTRY; SURFACES;

ATOMIC LAYERS; CIGS FILMS; CU(IN ,GA)SE2; CU(IN ,GA)SE2 (CIGS); KINK DENSITIES; PHOTOVOLTAIC DEVICES; ROTATIONAL TWINS; STEP EDGES; STEP HEIGHTS; STRUCTURE AND MORPHOLOGIES; VALENCE BAND EDGES;

COPPER;

EID: 56349130240 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3009961 Document Type: Article

Times cited : (16)

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