First-principles calculations of electronic structures of new III-V semiconductors: Bx Ga1-x As and TlxGa 1-x As alloys

Chinese Physics Letters

Volumn 25, Issue 9, 2008, Pages 3353-3356

  Zhou, Jing ^a   Ren, Xiao Min ^a   Huang, Yong Qing ^a   Wang, Qi ^a   Huang, Hui ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; BOND LENGTH; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTOR ALLOYS;

BAND-GAP BOWINGS; CALCULATION RESULTS; DENSITY-FUNCTIONAL-THEORY; ELECTRONIC.STRUCTURE; FIRST PRINCIPLE CALCULATIONS; GENERALIZED GRADIENT APPROXIMATIONS; III/V SEMICONDUCTORS; LATTICE STRUCTURES; SEMI-CONDUCTOR ALLOYS; STRUCTURE RELAXATION;

ELECTRONIC STRUCTURE;

EID: 56349125659     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/9/069     Document Type: Article

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