Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5187-5190

  Zorn, M ^a   Klopp, P ^b   Saas, F ^b   Ginolas, A ^a   Kruger O ^a   Griebner, U ^b   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b MAX BORN INSTITUT   (Germany)

Author keywords

A3. Metal organic vapor phase epitaxy; B2. Semiconducting III V materials; B3. Semiconductor disk laser; B3. Vertical external cavity surface emitting laser

Indexed keywords

ACOUSTIC MICROSCOPES; AMPLITUDE MODULATION; CRYSTAL GROWTH; DESIGN; DIODES; DISKS (STRUCTURAL COMPONENTS); ELECTRIC CONDUCTIVITY; FIBER LASERS; LASERS; LIGHT; LIGHT SOURCES; LIGHTING; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; MISSILE BASES; OPTICALLY PUMPED LASERS; POWER QUALITY; PULSE GENERATORS; PULSED LASER APPLICATIONS; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SOLID STATE LASERS; STRUCTURAL METALS; SURFACE EMITTING LASERS; SURFACE RELAXATION; SURFACE STRUCTURE; SURFACES; VAPORS;

A3. METAL-ORGANIC VAPOR PHASE EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; B3. SEMICONDUCTOR DISK LASER; B3. VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING LASER; BARRIER DESIGNS; CAVITY SURFACES; EXTERNAL-; GAIN ELEMENTS; GAIN STRUCTURES; HIGH OUTPUT POWERS; HIGH REPETITION RATES; LASER DIODES; LIMITED BEAMS; PUMP LASER DIODES; QUANTUM WELLS; REPETITION RATES; SEMI-CONDUCTORS; SEMICONDUCTOR COMPONENTS; SEMICONDUCTOR DISK LASERS; SEMICONDUCTOR SATURABLE ABSORBERS; SHORT PULSES; SIGNIFICANT REDUCTIONS;

SEMICONDUCTOR LASERS;

EID: 56249147451     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.017     Document Type: Article

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