Gain enhancement in cladding-pumped silicon Raman amplifiers

IEEE Journal of Quantum Electronics

Volumn 44, Issue 7, 2008, Pages 692-704

  Krause, Michael ^a   Renner, Hagen ^a   Fathpour, Sasan ^b   Jalali, Bahram ^b   Brinkmeyer, Ernst ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Free carrier absorption; Raman amplifiers; Silicon nitride; Silicon photonics

Indexed keywords

CONTINUOUS-WAVE OPERATIONS; DEVICE DESIGNS; EFFECTIVE AREAS; EXPLICIT EXPRESSIONS; FREE-CARRIER ABSORPTION; GAIN ENHANCEMENTS; GAIN VALUES; NEW DESIGNS; NON LINEARITIES; PUMP POWER; RAMAN AMPLIFIERS; SILICON CORES; SILICON PHOTONICS; SILICON RAMAN AMPLIFIERS; SILICON WAVEGUIDES; TWO-PHOTON ABSORPTIONS;

ABSORPTION; CLADDING (COATING); DESIGN; MULTIPHOTON PROCESSES; PHOTONIC DEVICES; PUMPS; REFRACTIVE INDEX; SILICA; SILICON NITRIDE; WAVEGUIDES;

NONMETALS;

EID: 56249135835     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.923427     Document Type: Article

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