Dual-surfactant effect to enhance p-type doping in III-V semiconductor thin films

Physical Review Letters

Volumn 101, Issue 19, 2008, Pages

  Zhu, J Y ^a   Liu, Feng ^a   Stringfellow, G B ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; ORGANOMETALLICS; SEMICONDUCTOR MATERIALS; THICK FILMS; THIN FILMS; ZINC;

COMBINED EFFECTS; EPITAXIALLY GROWN; FIRST-PRINCIPLES CALCULATIONS; ORGANOMETALLIC VAPORS; P-TYPE DOPING; SEMI-CONDUCTORS; SEMICONDUCTOR THIN FILMS; SINGLE SURFACES; SURFACTANT EFFECTS; ZN DOPING;

SURFACE ACTIVE AGENTS;

EID: 56249122262     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.196103     Document Type: Article

References (23)

1. M. Copel, M.C. Reuter, E. Kaxiras, and R.M. Tromp, Phys. Rev. Lett. 63, 632 (1989). PRLTAO 0031-9007 10.1103/PhysRevLett.63.632
2. G. Rosenfeld, Phys. Rev. Lett. 71, 895 (1993). PRLTAO 0031-9007 10.1103/PhysRevLett.71.895
3. J. Meyer, J. Vrijmoeth, H. van der Vegt, and R. Behm, Phys. Rev. B PRBMDO 0163-1829 51, 14790 (1995). 10.1103/PhysRevB.51.14790
4. M.R. Pillai, Seong-Soo Kim, S.T. Ho, and S.A. Barnett, J. Vac. Sci. Technol. B 18, 1232 (2000). JVTBD9 0734-211X 10.1116/1.591367
5. E. Rudkevich, Phys. Rev. Lett. 81, 3467 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.81.3467
6. C.M. Fetzer, Appl. Phys. Lett. 76, 1440 (2000). APPLAB 0003-6951 10.1063/1.126057
7. W. Zhu, Phys. Rev. Lett. 93, 126102 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.126102
8. D.C. Chapman, A.D. Howard, and G.B. Stringfellow, J. Cryst. Growth JCRGAE 0022-0248 287, 647 (2006). 10.1016/j.jcrysgro.2005.10.089
9. A.D. Howard, D.C. Chapman, and G.B. Stringfellow, J. Appl. Phys. 100, 044904 (2006). JAPIAU 0021-8979 10.1063/1.2227707
10. G. Kresse and J. Hafner, Phys. Rev. B PRBMDO 0163-1829 49, 14251 (1994); 10.1103/PhysRevB.49.14251
11. G. Kresse and J. Furthmuller, Comput. Matter 6, 8245 (1994).
12. G.H. Lu and F. Liu, Phys. Rev. Lett. 94, 176103 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.94.176103
13. Chris G. Van de Walle and J. Neugebauer, Phys. Rev. Lett. 88, 066103 (2002). PRLTAO 0031-9007 10.1103/PhysRevLett.88.066103
14. J.A. Appelbaum, G.A. Baraff, and D.R. Hamann, Phys. Rev. B PRBMDO 0163-1829 14, 1623 (1976). 10.1103/PhysRevB.14.1623
15. G. Chen, Phys. Rev. B PRBMDO 0163-1829 68, 121303 (2003). 10.1103/PhysRevB.68.121303
16. P.K. Larsen and D.J. Chadi. Phys. Rev. B PRBMDO 0163-1829 37, 8282 (1988). 10.1103/PhysRevB.37.8282
17. M. Sugiyama, S. Maeyama, F. Maeda, and M. Oshima, Phys. Rev. B PRBMDO 0163-1829 52, 2678 (1995). 10.1103/PhysRevB.52.2678
18. R. Wixom, N.A. Modine, and G.B. Stringfellow, Phys. Rev. B PRBMDO 0163-1829 67, 115309 (2003). 10.1103/PhysRevB.67.115309
19. L. Zhang, Phys. Rev. Lett. 97, 126103 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.97.126103
20. Feng Liu and M.G. Lagally, Phys. Rev. Lett. 76, 3156 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.76.3156
21. M.D. McCluskey, E.E. Haller, J.W. Walker, and N.M. Johnson, Appl. Phys. Lett. 65, 2191 (1994). APPLAB 0003-6951 10.1063/1.112758
22. E.V.K. Rao, B. Theys, Y. Gottesman, and H. Bissesur, in Proceedings of the 11th International Conference on Indium Phosphide and Related Materials (IEEE, New York, 1999).
23. C.H. Chen, S.A. Stockman, M.J. Peanasky, and C.P. Kuo, Semiconductors and Semimetals, Vol. 48, edited by, G.B. Stringfellow, and, M.G. Craford, (Academic Press, New York, 1997), pp. 122-127.