Lower temperature formation of alumina thin films through sol-gel route

Surface Review and Letters

Volumn 15, Issue 5, 2008, Pages 681-688

  Riaz, S ^a,b   Shamaila, S ^b   Khan, B ^c   Naseem, S ^a  

^a UNIVERSITY OF THE PUNJAB   (Pakistan)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c LCW University   (Pakistan)

Author keywords

Alumina; Corrundum; Low temperature; Sol gel

Indexed keywords

ALUMINA; ALUMINUM; COLLOIDS; ENERGY GAP; GALLIUM ALLOYS; GELATION; GELS; INTEGRATED OPTOELECTRONICS; MICROSCOPIC EXAMINATION; OPTICAL MICROSCOPY; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; THICK FILMS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ALUMINA THIN FILMS; ALUMINUM OXIDES; BAND GAPS; BAYERITE; CORRUNDUM; DEPOSITED FILMS; ENERGY BAND GAPS; LOW-TEMPERATURE; OPTICAL-; OPTIMIZED CONDITIONS; PHOTOCONDUCTION; ROOM TEMPERATURES; SCANNING ELECTRON MICROSCOPES; SINGLE-CRYSTAL SI; SODALIME GLASS SUBSTRATES; SOL-GEL; STABLE FORMS; STRUCTURAL CHANGES; TEMPERATURE FORMATIONS; X-RAY DIFFRACTIONS; XRD PATTERNS;

AMORPHOUS FILMS;

EID: 55849145141     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X08011858     Document Type: Article

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