Hopping conduction in strong electric fields: Negative differential conductivity

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 16, 2008, Pages

  Nenashev, A V ^a,b   Jansson, F ^c   Baranovskii, S D ^d   Osterbacka R ^c   Dvurechenskii, A V ^a,b   Gebhard, F ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^c ÅBO AKADEMI UNIVERSITY   (Finland)

^d PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 55849104324     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.165207     Document Type: Article

References (41)

1. H. Böttger and V. V. Bryksin, Hopping Conduction in Solids (VCH Akademie-Verlag, Berlin, 1985).
2. Charge Transport in Disordered Solids with Applications in Electronics, edited by, S. Baranovski, (Wiley, Chichester, 2006).
3. H. Bässler, Semiconducting Polymers, edited by, G. Hadziioannou, and, P. F. van Hutten, (Wiley, New York, 2000), p. 365.
4. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers (Oxford University Press, Oxford, 1999).
5. H. Bässler, Phys. Status Solidi B 10.1002/pssb.2221750102 175, 15 (1993).
6. P. M. Borsenberger, E. H. Magin, M. van der Auweraer, and F. C. de Schryver, Phys. Status Solidi A 10.1002/pssa.2211400102 140, 9 (1993).
7. M. van der Auweraer, F. C. de Schryver, P. M. Borsenberger, and H. Bässler, Adv. Mater. (Weinheim, Ger.) 10.1002/adma.19940060304 6, 199 (1994).
8. M. Abkowitz, Philos. Mag. B 10.1080/13642819208204922 65, 817 (1992).
9. A. Peled and L. B. Schein, Chem. Phys. Lett. 10.1016/0009-2614(88)85236-9 153, 422 (1988).
10. L. B. Schein, Philos. Mag. B 10.1080/13642819208204920 65, 795 (1992).
11. P. E. Parris and B. D. Bookout, Phys. Rev. B 10.1103/PhysRevB.53.629 53, 629 (1996).
12. A. Hirao, H. Nishizawa, and M. Sugiuchi, Phys. Rev. Lett. 10.1103/PhysRevLett.75.1787 75, 1787 (1995).
13. H. Cordes, S. D. Baranovskii, K. Kohary, P. Thomas, S. Yamasaki, F. Hensel, and J.-H. Wendorff, Phys. Rev. B 10.1103/PhysRevB.63.094201 63, 094201 (2001).
14. H. Böttger and V. V. Bryksin, Phys. Status Solidi B 10.1002/pssb.2220960121 96, 219 (1979).
15. Nguyen Van Lien and B. I. Shklovskii, Solid State Commun. 10.1016/0038-1098(81)90798-5 38, 99 (1981).
16. E. I. Levin and B. I. Shklovskii, Solid State Commun. 10.1016/0038-1098(88)90607-2 67, 233 (1988).
17. D. I. Aladashvili, Z. A. Adamia, K. G. Lavdovskii, E. I. Levin, and B. I. Shklovskii, Zh. Eksp. Teor. Fiz. 47, 390 (1988)
18. D. I. Aladashvili, Z. A. Adamia, K. G. Lavdovskii, E. I. Levin, and B. I. Shklovskii, [Sov. Phys. JETP 47, 466 (1988)].
19. D. I. Aladashvili, Z. A. Adamia, K. G. Lavdovskii, E. I. Levin, and B. I. Shklovskii, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 24, 234 (1990)
20. D. I. Aladashvili, Z. A. Adamia, K. G. Lavdovskii, E. I. Levin, and B. I. Shklovskii, [Sov. Phys. Semicond. 24, 143 (1990)].
21. D. I. Aladashvili, Z. A. Adamiya, K. G. Lavdovskii, E. I. Levin, and B. I. Shklovskii, in Hopping and Related Phenomena, edited by, H. Fritzsche, and, M. Pollak, (World Scientific, Singapore, 1990).
22. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
23. E. I. Levin, Nguyen Van Lien, and B. I. Shklovskii, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 16, 815 (1982)
24. E. I. Levin, Nguyen Van Lien, and B. I. Shklovskii, [Sov. Phys. Semicond. 16, 523 (1982)].
25. J. G. Simmons and R. R. Verderber, Proc. R. Soc. London, Ser. A 301, 77 (1967). 10.1098/rspa.1967.0191
26. R. E. Thurstans and D. P. Oxley, J. Phys. D 10.1088/0022-3727/35/8/312 35, 802 (2002).
27. L. D. Bozano, B. W. Kean, V. R. Deline, J. R. Salem, and J. C. Scott, Appl. Phys. Lett. 10.1063/1.1643547 84, 607 (2004).
28. L. D. Bozano, B. W. Kean, M. Beinhoff, K. R. Carter, P. M. Rice, and J. C. Scott, Adv. Funct. Mater. 10.1002/adfm.200500130 15, 1933 (2005).
29. H. S. Majumdar, J. K. Baral, R. Österbacka, O. Ikkala, and H. Stubb, Org. Electron. 10.1016/j.orgel.2005.06.005 6, 188 (2005).
30. F. Verbakel, S. C. J. Meskers, R. A. J. Janssen, H. L. Gomes, M. Colle, M. Buchel, and D. M. de Leeuw, Appl. Phys. Lett. 10.1063/1.2806275 91, 192103 (2007).
31. J. K. Baral, H. S. Majumdar, A. Laiho, H. Jiang, E. I. Kauppinen, R. H. A. Ras, J. Ruokolainen, O. Ikkala, and R. Österbacka, Nanotechnology 10.1088/0957-4484/19/03/035203 19, 035203 (2008).
32. This linear part is seen in Fig. 3 only for a=0.15R, because for a=0.1R and 0.07R the value nm is less than 10-4 N.
33. The integral in Eq. 12 is evaluated numerically.
34. Z. G. Yu, D. L. Smith, A. Saxena, R. L. Martin, and A. R. Bishop, Phys. Rev. Lett. 10.1103/PhysRevLett.84.721 84, 721 (2000).
35. Z. G. Yu, D. L. Smith, A. Saxena, R. L. Martin, and A. R. Bishop, Phys. Rev. B 10.1103/PhysRevB.63.085202 63, 085202 (2001).
36. W. F. Pasveer, J. Cottaar, P. A. Bobbert, and M. A. J. Michels, Synth. Met. 10.1016/j.synthmet.2005.07.164 152, 157 (2005).
37. J. Cottaar and P. A. Bobbert, Phys. Rev. B 10.1103/PhysRevB.74.115204 74, 115204 (2006).
38. F. Jansson, S. D. Baranovskii, G. Sliaužys, R. Österbacka, and P. Thomas, Phys. Status Solidi C 5, 722 (2008). 10.1002/pssc.200777567
39. F. Jansson, S. D. Baranovskii, F. Gebhard, and R. Österbacka, Phys. Rev. B 10.1103/PhysRevB.77.195211 77, 195211 (2008).
40. A. Miller and E. Abrahams, Phys. Rev. 10.1103/PhysRev.120.745 120, 745 (1960).
41. O. Rubel, S. D. Baranovskii, P. Thomas, and S. Yamasaki, Phys. Rev. B 10.1103/PhysRevB.69.014206 69, 014206 (2004).