Controllable dimension of ZnO nanowalls on GaN/c-Al 2O 3 substrate by vapor phase epitaxy method

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 9, 2008, Pages 4783-4786

  Song, W Y ^a   Shin, T I ^b   Kang, S M ^b   Kim, S W ^b,c   Yang, J H ^a   Park, M H ^b   Yang, C W ^b   Yoon, D H ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Kumoh National Institute of Technology   (South Korea)

Author keywords

GaN epilayer; Vapor phase epitaxy; ZnO nanowalls

Indexed keywords

AU THIN FILMS; C -AXIS; CHEMICAL COMPOSITIONS; DEEP LEVELS; EXCITON EMISSIONS; GAN EPILAYER; GROWTH CONDITIONS; GROWTH ORIENTATIONS; HEXAGONAL STRUCTURES; HIGH RESOLUTIONS; NANOWALL; ROOM TEMPERATURE PHOTOLUMINESCENCES; TRANSMISSION ELECTRON MICROSCOPES; X-RAY DIFFRACTIONS; ZNO NANOWALLS;

CRYSTAL GROWTH; GALLIUM NITRIDE; GOLD; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; ZINC ALLOYS; ZINC OXIDE;

VAPOR PHASE EPITAXY;

ALUMINUM OXIDE; GALLIUM; GALLIUM NITRIDE; NANOMATERIAL; UNCLASSIFIED DRUG; ZINC OXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT DESIGN; LUMINESCENCE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE; X RAY DIFFRACTION;

ALUMINUM OXIDE; CRYSTALLIZATION; EQUIPMENT DESIGN; GALLIUM; LUMINESCENCE; MATERIALS TESTING; MICROSCOPY, ELECTRON, SCANNING; NANOSTRUCTURES; NANOTECHNOLOGY; SURFACE PROPERTIES; TEMPERATURE; X-RAY DIFFRACTION; ZINC OXIDE;

EID: 55849085748     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.IC52     Document Type: Conference Paper

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