Effects of the DC bias in a molten silicon bath on its purification and hydrogenation by RF thermal plasma

Surface and Coatings Technology

Volumn 203, Issue 5-7, 2008, Pages 839-843

  Benmansour, M ^a   Rousseau, S ^a   Morvan, D ^a  

^a PSL RESEARCH UNIVERSITY   (France)

Author keywords

Bias; MG silicon; Purification; Thermal plasma

Indexed keywords

ATOMIC SPECTROSCOPY; BORON; BORON COMPOUNDS; CHEMICAL REACTIONS; EMISSION SPECTROSCOPY; GRAFTING (CHEMICAL); HYDROGENATION; IMPURITIES; LASER SPECTROSCOPY; LEAKAGE (FLUID); MOLECULAR SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; PHOTORESISTS; PLASMA APPLICATIONS; PLASMA SHEATHS; PLASMAS; PURIFICATION; RATE CONSTANTS; REACTION KINETICS; SILICON; SOLVENT EXTRACTION; SPECTROSCOPIC ANALYSIS; SYNTHESIS (CHEMICAL);

APPLIED BIASES; BIAS; DC BIASES; EX-SITU; HYDROGENATION RATES; HYDROGENATION REACTIONS; LASER INDUCED BREAKDOWN SPECTROSCOPIES; LIQUID SILICONS; METALLIC IMPURITIES; MG SILICON; MOLTEN SILICONS; PHOTOVOLTAIC APPLICATIONS; PLASMA GAS COMPOSITIONS; PLASMA TREATMENTS; RF THERMAL PLASMAS; THERMAL PLASMA; THERMAL PLASMAS;

NONMETALS;

EID: 55749102888     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.05.032     Document Type: Article

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