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Volumn 21, Issue 4, 2008, Pages 573-577

Controlling ambient gas in slot-to-slot space inside FOUP to suppress cu-loss after dual damascene patterning

Author keywords

Copper; Dual damascene; Etching; Fluorine; Inter connect; Oxidation

Indexed keywords

CHEMICAL OXYGEN DEMAND; ETCHING; FLUORINE; GASES; OXIDATION;

EID: 55649113982     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2008.2005343     Document Type: Conference Paper
Times cited : (25)

References (5)
  • 1
    • 0031186611 scopus 로고    scopus 로고
    • 2/SiN/Cu Via structures with dilute hydrofluoric acid solutions
    • Jul
    • 2/SiN/Cu Via structures with dilute hydrofluoric acid solutions," J. Electrochem. Soc., vol. 144, pp. 2565-2572, Jul. 1997.
    • (1997) J. Electrochem. Soc , vol.144 , pp. 2565-2572
    • Ueno, K.1    Donnelly, V.M.2    andT3    Kikkawa4
  • 5
    • 28744456054 scopus 로고    scopus 로고
    • Reliability improvement of Cu/low-k interconnects by integrating novel single pass single wafer wet clean
    • R. Chang et al., "Reliability improvement of Cu/low-k interconnects by integrating novel single pass single wafer wet clean," in Proc. ISSM, 2005, pp. 186-189.
    • (2005) Proc. ISSM , pp. 186-189
    • Chang, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.