-
1
-
-
84943727808
-
Fabrication and performance of color filter arrays for solid-state imagers
-
P. L. P. Dillon, A. T. Barrault, J. R. Horak, E. Garcia, T. W. Martin, and W. A. Light, “Fabrication and performance of color filter arrays for solid-state imagers, ” IEEE Trans. Electron Devices ED-25(2), 97-101 (1978).
-
(1978)
IEEE Trans. Electron Devices ED-25(2)
, pp. 97-101
-
-
Dillon, P.L.P.1
Barrault, A.T.2
Horak, J.R.3
Garcia, E.4
Martin, T.W.5
Light, W.A.6
-
2
-
-
0025699032
-
A silicon ultraviolet detector
-
R. S. Popovic, K. Solt, U. Falt, and Z. Stoessel, “A silicon ultraviolet detector, ” Sens. Actuators A21-A23 553-558 (1990).
-
(1990)
Sens. Actuators
, pp. 553-558
-
-
Popovic, R.S.1
Solt, K.2
Falt, U.3
Stoessel, Z.4
-
3
-
-
0025699053
-
Optimizing the performance of spectrally selective photodiodes by simulated annealing techniques
-
A. S. Glass and R. Morf, “Optimizing the performance of spectrally selective photodiodes by simulated annealing techniques, ” Sens. Actuators A21-A23 564-569 (1990).
-
(1990)
Sens. Actuators
, pp. 564-569
-
-
Glass, A.S.1
Morf, R.2
-
4
-
-
0025699025
-
Photodiodes in polysilicon with an electrically-programmable UV response
-
R. F. Wolffenbuttel, “Photodiodes in polysilicon with an electrically-programmable UV response, ” Sens. Actuators A21-A23 559-563 (1990).
-
(1990)
Sens. Actuators
, pp. 559-563
-
-
Wolffenbuttel, R.F.1
-
6
-
-
0022818080
-
Solid-state image sensors
-
M. G. Collet, “Solid-state image sensors, ” Sens. Actuators 10, 287-302 (1986).
-
(1986)
Sens. Actuators
, vol.10
, pp. 287-302
-
-
Collet, M.G.1
-
7
-
-
0021483679
-
Study of different sensor types for high-resolution linear CCD imagers
-
J. van der Spiegel, J. Sevenhans, A. J. P. Theuwissen, J. Bo-siers, I. Debusschere, and G. Declerck, “Study of different sensor types for high-resolution linear CCD imagers, ” Sens. Actuators 6, 51-64 (1984).
-
(1984)
Sens. Actuators
, vol.6
, pp. 51-64
-
-
Van Der Spiegel, J.1
Sevenhans, J.2
Theuwissen, A.J.P.3
Bo-Siers, J.4
Debusschere, I.5
Declerck, G.6
-
8
-
-
0028410292
-
An integrated colour sensor using selective epitaxial growth
-
M. Bartek, P. T. J. Gennissen, P. Sarro, P. J. French, and R. F. Wolffenbuttel, “An integrated colour sensor using selective epitaxial growth, ” Sens. Actuators A41-42 123-128 (1994).
-
(1994)
Sens. Actuators
, pp. 123-128
-
-
Bartek, M.1
Gennissen, P.T.J.2
Sarro, P.3
French, P.J.4
Wolffenbuttel, R.F.5
-
11
-
-
85010185922
-
-
McGraw-Hill, New York, Chaps. 2, 3, and 4
-
A. Thelen, Design of Optical Interference Coatings (McGraw-Hill, New York, 1988), Chaps. 2, 3, and 4.
-
(1988)
Design of Optical Interference Coatings
-
-
Thelen, A.1
-
13
-
-
5544322316
-
-
EMIS Datareviews SeriesINSPEC, Institution of Electrical Engineers, London, Chap. 28
-
H. R. Phillip, Properties of Silicon, No. 4 of EMIS Datareviews Series, (INSPEC, Institution of Electrical Engineers, London, 1988), Chap. 28, pp. 1009-1028.
-
(1988)
Properties of Silicon
, Issue.4
, pp. 1009-1028
-
-
Phillip, H.R.1
-
14
-
-
0009723969
-
Optical properties of thin-film silicon-compatible materials
-
D. P. Poenar and R. F. Wolffenbuttel, “Optical properties of thin-film silicon-compatible materials, ” Appl. Opt. 36, 5122-5128 (1997).
-
(1997)
Appl. Opt.
, vol.36
, pp. 5122-5128
-
-
Poenar, D.P.1
Wolffenbuttel, R.F.2
-
17
-
-
0020173615
-
Phenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illumination
-
E. Poon and W. Hwang, “Phenomenological model of grain-boundary trapping states in polycrystalline silicon under optical illumination, ” Solid State Electron. 25(8), 699-705 (1982).
-
(1982)
Solid State Electron
, vol.25
, Issue.8
, pp. 699-705
-
-
Poon, E.1
Hwang, W.2
-
18
-
-
0016060897
-
Electronic properties of undoped polycrystalline silicon
-
E. Muüoz, J. M. Boix, J. Llabres, J. P. Monico, and J. Piqueras, “Electronic properties of undoped polycrystalline silicon, ” Solid State Electron. 17(4), 439-446 (1974).
-
(1974)
Solid State Electron
, vol.17
, Issue.4
, pp. 439-446
-
-
Muüoz, E.1
Boix, J.M.2
Llabres, J.3
Monico, J.P.4
Piqueras, J.5
-
19
-
-
0018877130
-
Theory of the electrical and photovoltaic properties of polycrystalline silicon
-
A. K. Ghosh, C. Fishman, and T. Feng, “Theory of the electrical and photovoltaic properties of polycrystalline silicon, ” J. Appl. Phys. 51, 446-454 (1980).
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 446-454
-
-
Ghosh, A.K.1
Fishman, C.2
Feng, T.3
-
20
-
-
0022244990
-
Field-enhanced emission and capture in polysilicon p-n junctions
-
D. W. Greve, P. A. Potyraj, and A. M. Guzman, “Field-enhanced emission and capture in polysilicon p-n junctions, ” Solid State Electron. 28(12), 1255-1261 (1985).
-
(1985)
Solid State Electron
, vol.28
, Issue.12
, pp. 1255-1261
-
-
Greve, D.W.1
Potyraj, P.A.2
Guzman, A.M.3
-
21
-
-
0015414864
-
“P-N junctions in polycrystalline-silicon films
-
J. Manoliu and T. I. Kamins, “P-N junctions in polycrystalline-silicon films, ” Solid State Electron. 15(10), 1103-1106 (1972).
-
(1972)
Solid State Electron
, vol.15
, Issue.10
, pp. 1103-1106
-
-
Manoliu, J.1
Kamins, T.I.2
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