Formation and morphology evolution of nickel germanides on Ge (100) under rapid thermal annealing

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 55-59

  Lee, K Y ^a   Liew, S L ^a   Chua, S J ^a   Chi, D Z ^a   Sun, H P ^b   Pan, X Q ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; MOSFET DEVICES; PERMITTIVITY; RAPID THERMAL ANNEALING; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; INTERFACIAL MICROSTRUCTURE; SHEET RESISTANCE; X-RAY SPECTRA;

NICKEL;

EID: 5544284638     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c2.4     Document Type: Conference Paper

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