Temporally resolved laser induced plasma diagnostics of single crystal silicon - Effects of ambient pressure

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 63, Issue 10, 2008, Pages 1066-1071

  Cowpe, J S ^a   Astin, J S ^a   Pilkington, R D ^a   Hill, A E ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Laser ablation; LIBS; Plasma diagnostics; Silicon; Vacuum

Indexed keywords

ABLATION; ATMOSPHERIC PRESSURE; ATMOSPHERICS; CARRIER CONCENTRATION; CLIMATOLOGY; ELECTRON DENSITY MEASUREMENT; ELECTRONS; EMISSION SPECTROSCOPY; LASER ABLATION; LASER APPLICATIONS; LASER PRODUCED PLASMAS; LASER SPECTROSCOPY; LASERS; METEOROLOGY; PLASMA DIAGNOSTICS; PLASMA PROBES; PLASMAS; PRESSURE; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SILICON; SILICON WAFERS; SINGLE CRYSTALS; VACUUM;

AMBIENT PRESSURES; BREAKDOWN SPECTROSCOPIES; CRYSTAL SILICONS; ELECTRON DENSITIES; ELECTRON EXCITATIONS; EMISSION LINES; LASER ABLATION PLUMES; LASER INDUCED PLASMA DIAGNOSTICS; LIBS; NANO-SECONDS; ND: YAG; PLASMA MORPHOLOGIES; PRESSURE REGIMES; PULSED FREQUENCIES; STARK BROADENING; TEMPORAL EVOLUTIONS;

LASER DIAGNOSTICS;

EID: 55249101685     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2008.09.007     Document Type: Article

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