Non-stoichiometric SixN metal-oxide-semiconductor field-effect transistor for compact random number generator with 0.3 Mbit/s generation rate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 47, Issue 8 PART 1, 2008, Pages 6191-6195

  Matsumoto, Mari ^a   Ohba, Ryuji ^a   Yasuda, Shin Ichi ^a   Uchida, Ken ^a   Tanamoto, Tetsufumi ^a   Fujtta, Shinobu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

MOSFET; Network ubiquitous; Non stoichiometric SixN; Random number generator; Security

Indexed keywords

ACOUSTIC NOISE; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NUMBER THEORY; POWDERS; RANDOM PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDE; TRANSISTORS;

MOSFET; NETWORK UBIQUITOUS; NON-STOICHIOMETRIC SIXN; RANDOM NUMBER GENERATOR; SECURITY;

RANDOM NUMBER GENERATION;

EID: 55149109244     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6191     Document Type: Article

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