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Ferroelectrics

Volumn 357, Issue 1 PART 3, 2007, Pages 35-40

The influence of acceptor doping on the structure and electrical properties of sol-gel derived bifeo3 thin films

(5) Brinkman, K a Iijima, T a Nishida, K b Katoda, T b Funakubo, H c

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Raman scattering; Sol gel; Thin film

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACCEPTOR DOPING; BIFEO3 THIN FILM; BISMUTH FERRITES; COLUMNAR GRAIN; ELECTRICAL PROPERTY; GRAIN SIZE; LEAKAGE MEASUREMENTS; MICROSTRUCTURAL MODIFICATION; NOMINAL COMPOSITION; PSEUDOCUBIC; SI SUBSTRATES; SOL-GEL THIN FILMS; STRUCTURAL CHANGE;

BISMUTH; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FERROELECTRICITY; GELS; GRAIN GROWTH; GRAIN SIZE AND SHAPE; PHOTODEGRADATION; RAMAN SCATTERING; RAPID THERMAL PROCESSING; SCATTERING; SILICON COMPOUNDS; SOL-GELS; SOLS; STRONTIUM; THIN FILM DEVICES; THIN FILMS;

SOL-GEL PROCESS;

EID: 55149098146 PISSN: 00150193 EISSN: 15635112 Source Type: Journal
DOI: 10.1080/00150190701527597 Document Type: Conference Paper

Times cited : (36)

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