The insertion effect of Bi-excess layers on stoichiometric BiFeO 3 thin films prepared by chemical solution deposition

Functional Materials Letters

Volumn 1, Issue 1, 2008, Pages 19-24

  Nakamura, Yoshitaka ^a   Nakashima, Seiji ^a   Ricinschi, Dan ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

BiFeO 3; chemical solution deposition (CSD); interfacial layer; Multiferroic; thin film

Indexed keywords

BIFEO 3; BOTTOM SURFACES; CHEMICAL SOLUTION DEPOSITION; CHEMICAL SOLUTION DEPOSITION (CSD); CRYSTALLINITIES; FERROELECTRIC PROPERTY; IMPERFECT CRYSTALS; INTERFACIAL LAYER; MULTIFERROICS; SATURATED MAGNETIZATION; SURFACE LAYERS;

BISMUTH; BISMUTH COMPOUNDS; CHEMICALS; DEPOSITION; THIN FILMS; VAPOR DEPOSITION;

FILM PREPARATION;

EID: 55149096635     PISSN: 17936047     EISSN: 17937213     Source Type: Journal    
DOI: 10.1142/S1793604708000058     Document Type: Article

References (16)

1. G. A. Smolenskii and I. Chupis, Sov. Phys. Usp. 26, 475 (1982).
2. G. Smolenskii et al., Sov. Phys. J. Exp. Theor. Phys. 16, 622 (1963).
3. Y. N. Venevtsev, G. Zhadanov and S. Solov'ev, Sov. Phys. Crystallogr. 4, 538 (1960).
4. G. Smolenskii et al., Sov. Phys. Solid State 2, 2651 (1961).
5. I. Sosnowska, T. Peterlin-Neumaier and E. Streichele, J. Phys. C 15, 4835 (1982).
6. J. R. Teague, R. Gerson and W. J. James, Solid State Commun. 8, 1073 (1970).
7. J. Wang et al., Science 299, 1719 (2003).
8. K. Y. Yun et al., Appl. Phys. Lett. 89, 192902 (2006).
9. S. K. Singh, H. Ishiwara and K. Maruyama, Appl. Phys. Lett. 100, 064102 (2006).
10. Y. Nakamura et al., Integr. Ferroelec. 95, 223 (2007).
11. H. Naganuma and S. Okamura, Ext. Abstr. 54th Spring Meeting, Japan Society of Applied Physics and Related Societies (2007), 27p-SV-1 [in Japanese].
12. M. Grossmann et al., J. Appl. Phys. 92, 2680 (2002).
13. Y. W. Cho, S. K. Choi and G. Venkata Rao, Appl. Phys. Lett. 86, 202905 (2005).
14. K. Abe and S. Komatsu, Jpn. J. Appl. Phys. 32, 4186 (1993).
15. F. Bai et al., Appl. Phys. Lett. 86, 023511 (2005).
16. A. V. Zalesskii et al., J. Exp. Theor. Phys. Lett. 71, 465 (2000).