Low temperature growth of epitaxial pentacene films on the Si(1 1 1)-(√3 × √3)R30°-Ag surface

Surface Science

Volumn 602, Issue 22, 2008, Pages 3510-3514

  Teng, Jing ^a   Wu, Kehui ^a   Guo, Jiandong ^a   Wang, Enge ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Organic thin films growth; Pentacene; Scanning tunneling microscopy; Self assembly

Indexed keywords

AGGLOMERATION; ELECTRON DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILVER; THICK FILMS; THIN FILMS; TUNNELING (EXCAVATION);

AG SURFACES; DIMENSIONAL STRUCTURES; EPITAXIAL PENTACENE; GROWTH PROCESSES; LOW ENERGIES; LOW TEMPERATURE GROWTHS; LOW TEMPERATURES; MONOLAYER SURFACES; ORGANIC THIN FILMS GROWTH; PENTACENE; PENTACENE MOLECULES; PENTACENE THIN FILMS; ROOM TEMPERATURES; SELF-ASSEMBLY; STRUCTURAL EVOLUTIONS; SUBSTRATE TEMPERATURES;

FILM GROWTH;

EID: 55049101633     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.09.024     Document Type: Article

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