Atypical quantum confinement effect in silicon nanowires

Journal of Physical Chemistry A

Volumn 112, Issue 40, 2008, Pages 9955-9964

  Sorokin, Pavel B ^a,b,c   Avramov, Pavel V ^b,d   Chernozatonskii, Leonid A ^c   Fedorov, Dmitri G ^e   Ovchinnikov, Sergey G ^a,b  

^a SIBERIAN FEDERAL UNIVERSITY   (Russian Federation)

^b KIRENSKY INSTITUTE OF PHYSICS   (Russian Federation)

^c EMANUEL INSTITUTE OF BIOCHEMICAL PHYSICS   (Russian Federation)

^d KYOTO UNIVERSITY   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ENERGY GAP; GALLIUM ALLOYS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; QUANTUM CONFINEMENT; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

AMI METHODS; BAND GAPS; BLUE SHIFTS; DINGER EQUATIONS; LINEAR JUNCTIONS; MONOTONIC DECREASES; QUANTUM CONFINEMENT EFFECTS; QUANTUM DOTS; SEMIEMPIRICAL; SILICON NANOWIRES; SYSTEM SIZES; THEORETICAL MODELS;

NANOCRYSTALLINE SILICON;

NANOWIRE; QUANTUM DOT; SILICON;

ARTICLE; CHEMISTRY; ELECTRON; QUANTUM THEORY;

ELECTRONS; NANOWIRES; QUANTUM DOTS; QUANTUM THEORY; SILICON;

EID: 54849406891     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp805069b     Document Type: Article

References (27)

1. Wang, Y.; Schmidt, V.; Senz, S.; Gösele, U. Nature Natechnol. 2006, 1, 186.
2. Appel, D. Nature 2002, 419, 553.
3. Morales, A. M.; Lieber, C. M. Science 1998, 279, 208.
4. Avramov, P. V.; Chernozatonskii, L. A.; Sorokin, P. B.; Gordon, M. S. Nano Lett. 2007, 7, 20637.
5. Yeh, C. Y.; Zhang, S. B.; Zunger, A. Phys. Rev. B. 1994, 50, 14405.
6. Read, A. J.; Needs, E. J.; Nash, K. J.; Canham, L. T.; Calcott, P. D.; Qteish, A. Phys. Rev. Lett. 1992, 69, 1232.
7. Saita, A. M.; Buda, F.; Fiumara, G.; Giaquinta, P. V. Phys. Rev. B. 1996, 53, 1446.
8. Pan, H.; Chen, W.; Lim, S. H.; Poh, C. K.; Wu, X.; Feng, Y.; Ji, W.; Lin, J. J. Nanosci. Nanotechnol. 2005, 5, 733.
9. Wang, L. L.; Zunger, A. J. Phys. Chem. 1994, 98, 2158.
10. Wolkin, M. V.; Jorne, J.; Fauchet, P. M.; Allan, G.; Delerue, C. Phys. Rev. Lett. 1999, 82, 197.
11. Ovchinnikov, S. G. Bull. Russ. Acad. Sci.: Phys. 2008, 82, 156.
12. Ma, D. D. D.; Lee, C. S.; Au, F. C. K.; Tong, S. Y.; Lee, S. T. Science 2003, 299, 1874.
13. Zhao, Y.; Yakobson, B. Phys. Rev. Lett. 2003, 91, 035501.
14. Avramov, P. V.; Kuzubov, A. A.; Fedorov, A. S.; Sorokin, P. B.; Tomilin, F. N.; Maeda, Y. Phys. Rev. B 2007, 75, 205427.
15. Avramov, P. V.; Fedorov, D. G.; Sorokin, P. B.; Chernozatonskii, L. A.; Gordon, M. S. J. Phys. Chem. C 2007, 111, 18824.
16. Zhao, Y.; Kim, Y. H.; Du, M. H.; Zhang, S. B. Phys. Rev. Lett. 2004, 93, 015502.
17. Nishio, K.; Morishita, T.; Shinoda, W.; Mikami, M. J. Chem. Phys. 2006, 125, 074712.
18. Dewar, M. J. S.; Zoeblish, E. G.; Healy, E. F.; Stewart, J. J. P. J. Am. Chem. Soc. 1985, 107, 3902.
19. Stewart, J. J. P. J. Comput. Chem. 1989, 10, 209.
20. Sze, S. M. The Physics of Semiconductor Devices; Wiley: New York, 1969.
21. Mazzone, A. M. Phys. Rev. B 1996, 54, 5970.
22. (a) Becke, A. D. Phys. Rev. 1988, A38, 3098.
23. (b) Lee, C.; Yang, W.; Parr, R. G. Phys. Rev. 1988, B37, 785.
24. (c) Barone, V Chem. Phys. Lett. 1994, 226, 392.
25. Efros, Al.L.; Efros, A. L. Sov. Phys. Semicond 1982, 16, 772.
26. Landau, L. D.; Lifshitz, E. M. Pergamon Press: Oxford, U.K., 1977.
27. http://www.chemcraftprog.com.