A comparison of high temperature performance of SiC DMOSFETs and JFETs

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 775-778

  Ryu, Sei Hyung ^a   Krishnaswami, Sumi ^a   Hull, Brett A ^a   Heath, Bradley ^a   Husna, Fatima ^a   Richmond, James ^a   Agarwal, Anant ^a   Palmour, John ^a   Scofield, James ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

High temperature; High voltage; JFET; MOSFET

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE EFFECTS; INTERFACE STATES; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; THRESHOLD VOLTAGE;

HIGH TEMPERATURE; HIGH TEMPERATURE CHARACTERISTICS; HIGH TEMPERATURE PERFORMANCE; HIGH VOLTAGE; INTERFACE STATE DENSITY; MOS-FET; TEMPERATURE-INSENSITIVE; THRESHOLD VOLTAGE SHIFTS;

SILICON CARBIDE;

EID: 38449113590     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.775     Document Type: Conference Paper

References (4)

1. J. Scofield et al.: presented at MRS spring meeting, April 17 - 21, 2006, San Francisco, CA.
2. W. J. Schaffer et al.: Mat. Res. Soc. Symp. Proc. Vol. 339 (1994), p. 595
3. S. Ryu et al.: presented at HiTEC, May 15 - 18, 2006, Santa Fe, NM.
4. A. Agarwal et al.: Silicon Carbide, Recent Major Advances, Springer-Verlag Berlin Heidelberg 2004, Germany, p. 785.