On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range

Applied Surface Science

Volumn 255, Issue 1, 2008, Pages 254-256

  Gordo, P M ^a   Liszkay, L ^b   Kajcsos, Zs ^b   Havancsak K ^c   Skuratov, V A ^d   Kogel G ^e   Sperr, P ^e   Egger, W ^e   de Lima, A P ^a   Ferreira Marques, M F ^a,f  

^a UNIVERSITY OF COIMBRA   (Portugal)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c EÖTVÖS LORÁND UNIVERSITY   (Hungary)

^d JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^e BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^f POLYTECHNIC INSTITUTE OF COIMBRA   (Portugal)

Author keywords

Al 2 O 3; Defects; Doppler broadening; Positron lifetimes; Positron trapping; Sapphire

Indexed keywords

ALUMINA; ALUMINUM OXIDE; DEFECTS; DOPPLER EFFECT; ELECTRONS; POSITRONS; SAPPHIRE;

DEFECT PATTERNS; INDIVIDUAL ION; MONOVACANCIES; POSITRON LIFETIME; POSITRON TRAPPING; PULSED POSITRON BEAMS; STRUCTURAL IMPERFECTIONS; VACANCY CLUSTER;

IONS;

EID: 54849189000     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.185     Document Type: Article

References (10)

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