Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing

Optics Express

Volumn 16, Issue 20, 2008, Pages 15728-15732

  Kang, Hoonsoo ^a   Kim, Jong Su ^a   Hwang, Sung In ^a   Park, Young Ho ^a   Ko, Do Kyeong ^a   Lee, Jongmin ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY (ORGANIC); EQUATIONS OF STATE; GALLIUM ARSENIDE; GROUND STATE; OPTICAL CORRELATION; QUANTUM OPTICS; SEMICONDUCTING GALLIUM; TRANSPARENCY;

COULOMB CORRELATIONS; ELECTROMAGNETICALLY-INDUCED TRANSPARENCY; GAAS QUANTUM WELLS; GAAS/ALGAAS QUANTUM WELL; LATTICE TEMPERATURES; N-DOPING MATERIAL; OPTICAL RESPONSE; RADIATION DECAY;

SEMICONDUCTOR QUANTUM WELLS;

GALLIUM; GALLIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT DESIGN; LUMINESCENCE; OPTICS; PHOTON; QUANTUM THEORY; SEMICONDUCTOR; TEMPERATURE; TIME;

ARSENICALS; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; GALLIUM; LUMINESCENCE; OPTICS; PHOTONS; QUANTUM THEORY; SEMICONDUCTORS; TEMPERATURE; TIME FACTORS;

EID: 54749111072     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.015728     Document Type: Article

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