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Physical Review Letters

Volumn 95, Issue 18, 2005, Pages

Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor

(5) Fu, Kai Mei C a Santori, Charles b Stanley, Colin c Holland, M C c Yamamoto, Yoshihisa a

a STANFORD UNIVERSITY (United States)

b HEWLETT PACKARD LABORATORIES (United States)

c UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

POPULATION TRAPPING; SEMICONDUCTOR SYSTEMS; TWO-PHOTON DETUNING; ZEEMAN STATE;

ELECTROMAGNETIC FIELD EFFECTS; ELECTRON TRAPS; ELECTRONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; TUNING;

SEMICONDUCTOR DEVICES;

EID: 28844449375 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.95.187405 Document Type: Article

Times cited : (93)

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