Preparation and thermoelectric properties of mg2si1−xgex(x=0.0∼0.4) Solid solution semiconductors

Materials Transactions, JIM

Volumn 33, Issue 9, 1992, Pages 845-850

  Noda, Yasutoshi ^a   Furukawa, Yoshitaka ^a   Kon, Hiroyuki ^a   Nishida, Isao A ^b   Masumoto, Katashi ^c   Otsuka, Nobuyuki ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c ISHINOMAKI SENSHU UNIVERSITY   (Japan)

^d PANASONIC CORPORATION   (Japan)

Author keywords

dimagnesium silicon germanide; dopants; Fermi integral; figure of merit; semiconducting solid solution; thermoelectricity

Indexed keywords

EID: 84968420969     PISSN: 09161821     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans1989.33.845     Document Type: Article

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