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Volumn 49, Issue 9, 2008, Pages 1953-1956
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Three-dimensional observation of dislocations by electron tomography in a silicon crystal
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Author keywords
Annular dark field (ADF); Mechanical property; Scanning transmission electron microscopy (STEM)
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Indexed keywords
BENDING (DEFORMATION);
DIAGNOSTIC RADIOGRAPHY;
DISLOCATIONS (CRYSTALS);
ELECTRIC FIELD MEASUREMENT;
ELECTRIC IMPEDANCE TOMOGRAPHY;
ELECTRON MICROSCOPES;
ELECTRONS;
MECHANICAL PROPERTIES;
MEDICAL IMAGING;
MICROSCOPIC EXAMINATION;
POWDERS;
SCANNING;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SINGLE CRYSTALS;
THREE DIMENSIONAL;
TOMOGRAPHY;
TRANSMISSION ELECTRON MICROSCOPY;
[110] DIRECTIONS;
ADJUSTING;
ANNULAR DARK FIELD (ADF);
BENDING;
DARK FIELDS;
DIFFRACTION VECTORS;
ELECTRON TOMOGRAPHIES;
HIGH-TEMPERATURE;
INTERACTIVE;
POINT BENDING;
RECONSTRUCTION TECHNIQUES;
SCANNING TRANSMISSION ELECTRON MICROSCOPIES;
SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);
SILICON CRYSTALS;
SILICON SINGLE CRYSTALS;
SILICON WAFERS;
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EID: 54549114393
PISSN: 13459678
EISSN: None
Source Type: Journal
DOI: 10.2320/matertrans.MAW200828 Document Type: Article |
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Times cited : (19)
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References (10)
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