Synethesis of VO2 nanowire and observation of metal-insulator transition

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3296-3298

  Choi, Sungyoul ^a   Kim, Bong Jun ^a   Lee, Yong Wook ^a   Yun, Sun Jin ^a   Kim, Hyun Tak ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Mott transition; TCR; VO2 nanowire

Indexed keywords

ELECTRIC WIRE; METAL INSULATOR BOUNDARIES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSITION METALS; VANADIUM;

CRYSTALLINE NANOWIRES; FIRST-ORDER; METAL DEPOSITIONS; MOTT TRANSITION; SEMICONDUCTING BEHAVIORS; SEMICONDUCTING NANOWIRES; TCR; TEMPERATURE COEFFICIENT OF RESISTANCES; VO2 NANOWIRE;

METAL INSULATOR TRANSITION;

EID: 54349088567     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3296     Document Type: Article

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