메뉴 건너뛰기




Volumn 47, Issue 1 PART 2, 2008, Pages 725-729

Selective growth of single-, double-, and triple-walled carbon nanotubes through precise control of catalyst diameter by radiation-heated chemical vapor deposition

Author keywords

Carbon nanotubes; Catalyst diameter; Dip coating; DWCNTs; Graphene walls; Radiation heated chemical vapor deposition; RHCVD; Selective growth; SWCNTs; TWCNTs

Indexed keywords

CARBON; CARBON FILMS; CATALYSIS; CHEMICAL VAPOR DEPOSITION; CLARIFICATION; FILM GROWTH; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN); SYNTHESIS (CHEMICAL); VAPORS;

EID: 54249126115     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.725     Document Type: Article
Times cited : (3)

References (11)
  • 9
    • 54249155590 scopus 로고    scopus 로고
    • Y. Taki and K. Shinohara: Japan Patent JP20040326593 (2004).
    • Y. Taki and K. Shinohara: Japan Patent JP20040326593 (2004).
  • 10
    • 54249144722 scopus 로고    scopus 로고
    • PCT Patent W02006052009
    • Y. Taki and K. Shinohara: PCT Patent W02006052009 (2006).
    • (2006)
    • Taki, Y.1    Shinohara, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.