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Volumn , Issue , 2008, Pages 426-429

Aggressive leakage reduction of SRAMs using error checking and correcting (ECC) techniques

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; NETWORKS (CIRCUITS); PROBABILITY DISTRIBUTIONS; RANDOM ACCESS STORAGE; STATIC RANDOM ACCESS STORAGE;

EID: 54249122248     PISSN: 15483746     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSCAS.2008.4616827     Document Type: Conference Paper
Times cited : (3)

References (6)
  • 1
  • 2
    • 33749530062 scopus 로고    scopus 로고
    • Weak cell detection in deep-submicron SRAMs: A programmable detection technique
    • October
    • A. Pavlov, M. Sachdev, and J. P. de Gyvez, "Weak cell detection in deep-submicron SRAMs: A programmable detection technique," IEEE Journal of Solid-State Circuits, vol. 41, no, 10, pp. 2334-2343, October 2006.
    • (2006) IEEE Journal of Solid-State Circuits , vol.41 , Issue.10 , pp. 2334-2343
    • Pavlov, A.1    Sachdev, M.2    de Gyvez, J.P.3
  • 4
    • 34247274752 scopus 로고    scopus 로고
    • Online, Available
    • Predictive Technology Model. [Online]. Available: http://www.eas.asu.edu/ ̃ptm/
    • Predictive Technology Model
  • 5
    • 0034505514 scopus 로고    scopus 로고
    • An experimental analysis of spot defects in SRAMs: Realistic fault models and tests
    • December
    • S. Hamdioui and A. V. D. Goor, 'An experimental analysis of spot defects in SRAMs: realistic fault models and tests," in Proc. of the Ninth Asian Test Symposium, December 2000, pp. 131-138.
    • (2000) Proc. of the Ninth Asian Test Symposium , pp. 131-138
    • Hamdioui, S.1    Goor, A.V.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.