Low-temperature magnetoresistance study of electrical transport in N- and B-doped ultrananocrystalline and nanocrystalline diamond films

Diamond and Related Materials

Volumn 15, Issue 4-8, 2006, Pages 607-613

  Nesladek, M ^a   Tromson, D ^a   Bergonzo, P ^a   Hubik, P ^b   Mares, J J ^b   Kristofik, J ^b   Kindl, D ^b   Williams, O A ^c   Gruen, D ^c  

^a CEA SACLAY   (France)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Doping; Low temperature transport; NCD; U NCD; Weak localisation

Indexed keywords

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); MAGNETORESISTANCE; NANOSTRUCTURED MATERIALS; NITROGEN; THIN FILMS;

LOW-TEMPERATURE TRANSPORT; METAL INSULATING TRANSITION (MIT); NITROGEN-DOPED ULTRANANOCRYSTALLINE (N-UNCD); WEAK LOCALISATION (WL);

DIAMOND FILMS;

EID: 33746956154     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.11.001     Document Type: Article

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