Vibrational spectroscopy of InAlAs epitaxial layers

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Milekhin, A G ^a   Kalagin, A K ^a   Vasilenko, A P ^a   Toropov, A I ^a   Surovtsev, N V ^b   Zahn, D R T ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; CRYSTAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; INDIUM ARSENIDE; METALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY;

ANALYTICAL EXPRESSIONS; COMPOSITION RANGES; FOURTH ORDERS; FREQUENCY VARIATIONS; IN COMPOSITIONS; IR DATUM; IR SPECTROSCOPIES; LONGITUDINAL; MOLECULAR-BEAM EPITAXIES; OPTICAL PHONONS; RESONANT CONDITIONS;

PHONONS;

EID: 54049151983     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980344     Document Type: Article

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