Half-metallic ferromagnetism in Cd1-xTMxSe (TM = Cr, V and Mn) semiconductors

Computational Materials Science

Volumn 43, Issue 4, 2008, Pages 710-714

  Zhang, Chang Wen ^a   Yan, Shi Shen ^b   Wang, Pei Ji ^a   Zhang, Zhong ^a  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

Electronic structure; First principles calculation; Half metallic ferromagnetism

Indexed keywords

ARSENIC COMPOUNDS; CADMIUM COMPOUNDS; CHLORINE COMPOUNDS; CHROMIUM; ELECTRONIC STRUCTURE; FERROMAGNETISM; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; METALS; STRONTIUM COMPOUNDS; TERNARY SYSTEMS; TRANSITION METALS; ZINC;

AUGMENTED PLANE-WAVE METHOD; DENSITY OF STATES; DOPED SYSTEMS; ELECTRONIC STRUCTURES; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; HALF-METALLIC FERROMAGNETISM; INTEGER VALUES; METAL-DOPED; ZINC-BLENDE;

MAGNETISM;

EID: 52949084331     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2008.01.012     Document Type: Article

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