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Volumn 40, Issue 6, 1997, Pages 101-108
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Charge control for high-current ion implant
a,b,c a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CHARGE;
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRIC VARIABLES CONTROL;
ELECTRON TRANSPORT PROPERTIES;
IONIZATION OF GASES;
OXIDES;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SILICON WAFERS;
ELECTRIC CONDUCTIVITY;
ELECTRIC POTENTIAL;
ELECTROSTATICS;
ION BEAMS;
ION BOMBARDMENT;
ION IMPLANTATION;
RADIATION DAMAGE;
PLASMA ELECTRON FLOOD (PEF);
SECONDARY ELECTRON FLOOD (SEF);
WAFER-CHARGE CONTROL;
ELECTRIC CHARGE CONTROL;
HIGH CURRENT ION IMPLANTATION;
PLASMA ELECTRON FLOODS (PEF);
SECONDARY ELECTRON FLOODS (SEF);
ION IMPLANTATION;
SEMICONDUCTOR DEVICE MANUFACTURE;
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EID: 5244268783
PISSN: 0038111X
EISSN: None
Source Type: Trade Journal
DOI: None Document Type: Article |
Times cited : (6)
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References (10)
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