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Volumn 40, Issue 6, 1997, Pages 101-108

Charge control for high-current ion implant

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC VARIABLES CONTROL; ELECTRON TRANSPORT PROPERTIES; IONIZATION OF GASES; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROSTATICS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; RADIATION DAMAGE;

EID: 5244268783     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (10)
  • 2
    • 5944226746 scopus 로고
    • Wafer Cooling and Charging in Ion Implantation
    • ed. J. Ziegler, North Holland Publ.
    • M. Mack, "Wafer Cooling and Charging in Ion Implantation," in Ion Implantation Technology, ed. J. Ziegler, North Holland Publ., p. 601, 1992.
    • (1992) Ion Implantation Technology , pp. 601
    • Mack, M.1
  • 3
    • 0027693956 scopus 로고
    • Modeling Oxide Thickness Dependence of Charging Damage by Plasma Processing
    • H. Shin, K. Noguchi, C. Hu, "Modeling Oxide Thickness Dependence of Charging Damage by Plasma Processing," IEEE Electron Device Letters, Vol. 14, No. 11, p. 509, 1993.
    • (1993) IEEE Electron Device Letters , vol.14 , Issue.11 , pp. 509
    • Shin, H.1    Noguchi, K.2    Hu, C.3
  • 5
    • 0006292946 scopus 로고
    • Theoretical and Experimental Study of Space Charge in Intense Ion Beams
    • A.J.T. Holmes, "Theoretical and Experimental Study of Space Charge in Intense Ion Beams," Physics Review A, Vol. 19, p. 389, 1979.
    • (1979) Physics Review A , vol.19 , pp. 389
    • Holmes, A.J.T.1
  • 6
    • 5944256875 scopus 로고
    • Gate Oxides in High Current Implanters: How Do They Survive?
    • F. Sinclair, "Gate Oxides in High Current Implanters: How Do They Survive?" Nucl. Instr. and Meth., Vol. B55, p. 115, 1991.
    • (1991) Nucl. Instr. and Meth. , vol.B55 , pp. 115
    • Sinclair, F.1
  • 8
    • 0030363828 scopus 로고    scopus 로고
    • Optimizaion of the Secondary Electron Flood Design for the Production of Low Energy Electrons
    • Austin, TX, June, in press
    • R.N. Reece et al., "Optimizaion of the Secondary Electron Flood Design for the Production of Low Energy Electrons,"Proceedings of VII International Conference on Ion Implantation Technology, Austin, TX, June, 1996, in press
    • (1996) Proceedings of VII International Conference on Ion Implantation Technology
    • Reece, R.N.1
  • 9
    • 0026238919 scopus 로고
    • Wafer Charging Control in High Current Ion Implanters
    • C.P. Wu, F. Kolondra, "Wafer Charging Control in High Current Ion Implanters,"; J. Electrochem. Soc., Vol. 138, p. 3100, 1991.
    • (1991) J. Electrochem. Soc. , vol.138 , pp. 3100
    • Wu, C.P.1    Kolondra, F.2
  • 10
    • 0029513601 scopus 로고
    • Effect of Oxide Exposure, Photoresist and Dopant Activation on Plasma Damage Immunity of Ultrathin Oxides and Oxynitrides
    • K. Lai, K. Kumar, A. Chou, J.C. Lee, "Effect of Oxide Exposure, Photoresist and Dopant Activation on Plasma Damage Immunity of Ultrathin Oxides and Oxynitrides," IEDM, p.319, 1995.
    • (1995) IEDM , pp. 319
    • Lai, K.1    Kumar, K.2    Chou, A.3    Lee, J.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.