Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property

Journal of Crystal Growth

Volumn 310, Issue 20, 2008, Pages 4412-4416

  Feng, J J ^a   Yan, P X ^a,b   Yang, Q ^a   Chen, J T ^a   Yan, D ^a  

^a LANZHOU UNIVERSITY   (China)

^b LANZHOU INSTITUTE OF CHEMICAL PHYSICS   (China)

Author keywords

A1. Nanostructures; A1. Nucleation; A2. DC arc discharge method; B2. Semiconducting silicon

Indexed keywords

AIR POLLUTION; CAVITY RESONATORS; DISCHARGE (FLUID MECHANICS); ELECTRON BEAM LITHOGRAPHY; EMISSION SPECTROSCOPY; LIGHT; LIGHT EMISSION; MICROSCOPES; NANOPORES; NANOSTRUCTURES; NANOTUBES; OPTICAL DESIGN; PHOTOLUMINESCENCE; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SILICON; TIN; TIN ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

A1. NANOSTRUCTURES; A1. NUCLEATION; A2. DC ARC DISCHARGE METHOD; B2. SEMICONDUCTING SILICON; BLUE EMISSIONS; COAXIAL NANOCABLES; DC ARC DISCHARGES; FIELD-EMISSION SCANNING ELECTRON MICROSCOPE; GROWTH MECHANISMS; NANOCABLES; PHOTOLUMINESCENCE (PL); PL SPECTRUM; POLYCRYSTALLINE-SI; TRANSMISSION ELECTRON MICROSCOPE; VAPOR-LIQUID-SOLID MODEL; X-RAY DIFFRACTION; YELLOW EMISSIONS;

LUMINESCENCE;

EID: 52149093659     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.074     Document Type: Article

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