Velocity of surface carriers in inversion layers on silicon

Solid State Electronics

Volumn 23, Issue 1, 1980, Pages 35-40

  Coen, R W ^a   Muller, R S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0018960654     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(80)90165-3     Document Type: Article

References (10)

1. Carrier mobilities in silicon empirically related to doping and field
2. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
3. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
4. Threshold voltage variations with temperature in MOS transistors