Estimation of leakage current density and remanent polarization of BiFeO3 films with low resistivity by positive, up, negative, and down measurements

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5558-5560

  Naganuma, Hiroshi ^a   Inoue, Yosuke ^a   Okamura, Soichiro ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

BiFeO3 films; Leakage current; PUND; Temperature dependence

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; MAGNETIC MATERIALS; POLARIZATION; REMANENCE; SEMICONDUCTING BISMUTH COMPOUNDS; SILICON; TURBULENT FLOW;

BIFEO3 FILMS; CHEMICAL SOLUTION DEPOSITIONS; CONVENTIONAL MEASUREMENTS; CURRENT COMPONENTS; DIELECTRIC BREAKDOWNS; FERROELECTRIC HYSTERESIS LOOPS; FERROELECTRIC POLARIZATIONS; HIGH ELECTRIC FIELDS; LEAKAGE CURRENT MECHANISMS; LOW RESISTIVITIES; POLYCRYSTAL LINES; PULSE RESPONSES; PUND; REMANENT POLARIZATIONS; SI (100) SUBSTRATES; TEMPERATURE DEPENDENCE;

LEAKAGE CURRENTS;

EID: 51849161752     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5558     Document Type: Article

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