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Volumn , Issue , 2008, Pages 53-56

(INVITED) deep-submicron digital CMOS potentialities for millimeter-wave applications

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; MILLIMETER WAVES; RADIO WAVES; TECHNOLOGY;

EID: 51849135408     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2008.4561384     Document Type: Conference Paper
Times cited : (15)

References (12)
  • 1
    • 44849135656 scopus 로고    scopus 로고
    • A. Cathelin, et al. Design for Millimeter-wave Applications in Silicon Technologies, ESSCIRC 2007, Munich, Sept. 2007
    • A. Cathelin, et al. "Design for Millimeter-wave Applications in Silicon Technologies", ESSCIRC 2007, Munich, Sept. 2007
  • 2
    • 51849093231 scopus 로고    scopus 로고
    • mm-wave Silicon Technology: 60GHz and Beyond, edited by A.M. Niknejad and H. Hashemi, Springer, 2008
    • "mm-wave Silicon Technology: 60GHz and Beyond", edited by A.M. Niknejad and H. Hashemi, Springer, 2008
  • 3
    • 34748872382 scopus 로고    scopus 로고
    • Advanced SiGe BiCMOS and CMOS platforms for Optical and mmW-Wave Integrated Circuits
    • P. Chevalier, et al., "Advanced SiGe BiCMOS and CMOS platforms for Optical and mmW-Wave Integrated Circuits", IEEE CSICS 2006
    • (2006) IEEE CSICS
    • Chevalier, P.1
  • 7
    • 44849083537 scopus 로고    scopus 로고
    • Optimized MOS topology on CMOS process for millimeter wave design
    • FR Patent Application, September
    • B. Martineau, A. Cathelin, "Optimized MOS topology on CMOS process for millimeter wave design", FR Patent Application, September 2007
    • (2007)
    • Martineau, B.1    Cathelin, A.2
  • 8
    • 51849167114 scopus 로고    scopus 로고
    • Potentialités des technologies CMOS 65nm SOI LP pour des applications en bande millimétrique
    • PhD Thesis to be presented at the Université des Sciences et Technologies de Lille, March
    • B. Martineau, "Potentialités des technologies CMOS 65nm SOI LP pour des applications en bande millimétrique", PhD Thesis to be presented at the Université des Sciences et Technologies de Lille, March 2008
    • (2008)
    • Martineau, B.1
  • 9
    • 33746927173 scopus 로고    scopus 로고
    • The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks
    • Aug
    • T.O. Dickson, et al., "The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks". IEEE JSSC, vol. 41, No. 8, Aug. 2006
    • (2006) IEEE JSSC , vol.41 , Issue.8
    • Dickson, T.O.1
  • 10
    • 34748819138 scopus 로고    scopus 로고
    • Etude de faisabilité de circuits pour systèmes de communication en bande millimétrique, en technologie BiCMOS SiGeC 0.13μm
    • PhD Thesis presented at the Université des Sciences et Technologies de Lille, Nov. 25
    • S. Pruvost, " Etude de faisabilité de circuits pour systèmes de communication en bande millimétrique, en technologie BiCMOS SiGeC 0.13μm", PhD Thesis presented at the Université des Sciences et Technologies de Lille, Nov. 25 2005
    • (2005)
    • Pruvost, S.1
  • 11
    • 51849118992 scopus 로고    scopus 로고
    • Evaluation de la technologie CMOS SOI Haute-Résistivité pour applications RF jusqu'en bande millimétrique
    • PhD Thesis presented at the Institut Polytechnique de Grenoble, France, October
    • F. Gianesello, "Evaluation de la technologie CMOS SOI Haute-Résistivité pour applications RF jusqu'en bande millimétrique", PhD Thesis presented at the Institut Polytechnique de Grenoble, France, October 2006
    • (2006)
    • Gianesello, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.