Ballistic transport properties in spin field-effect transistors

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Jiang, K M ^a   Yang, Jun ^b   Zhang, R ^a   Wang, Hongyan ^a  

^a SHANGHAI MARITIME UNIVERSITY   (China)

^b PLA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CONTACTS (FLUID MECHANICS); EXPLOSIVES; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; MAGNETIC MATERIALS; MIXING; MODULATION; POLARIZATION; PROGRAMMABLE LOGIC CONTROLLERS; SPIN DYNAMICS; SPIN POLARIZATION; TRANSISTORS; TRANSPORT PROPERTIES;

BALLISTIC TRANSPORTS; CONDUCTANCE PROPERTIES; CONTACT INTERFACES; FERROMAGNETIC ELECTRODES; HIGH POTENTIAL; IN-PLANE MAGNETIC FIELDS; INTERFACE SCATTERING; RASHBA SPIN-ORBIT COUPLING; SPIN CHANNELS; SPIN POLARIZATIONS; SPIN PRECESSION;

FIELD EFFECT TRANSISTORS;

EID: 51849124576     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2970102     Document Type: Article

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