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Volumn 25, Issue 4, 2005, Pages 399-403

A spin field effect transistor for low leakage current

Author keywords

Spin field effect transistors; Spin orbit interaction; Spintronics

Indexed keywords

ELECTRIC POTENTIAL; ENERGY DISSIPATION; FERROMAGNETIC MATERIALS; LEAKAGE CURRENTS; MAGNETIC FIELD EFFECTS; MAGNETIZATION; PROBABILITY;

EID: 10044255294     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.07.009     Document Type: Article
Times cited : (13)

References (20)
  • 2
    • 0000696553 scopus 로고
    • E.I. Rashba, Sov. Phys. Semicond. 2 (1960) 1109; Y.A. Bychkov, E.I. Rashba, J. Phys. C 17 (1984) 6039.
    • (1960) Sov. Phys. Semicond. , vol.2 , pp. 1109
    • Rashba, E.I.1
  • 4
    • 10044283657 scopus 로고    scopus 로고
    • note
    • Datta and Das appropriately called their device "an electronic analog of the electro-optic modulator" rather than a "spin field effect transistor". This device may not have all the attributes of a useful transistor and is probably not competitive with state-of-the-art silicon transistors in terms of speed or power dissipation (see Ref. [12]).
  • 9
    • 26144474736 scopus 로고    scopus 로고
    • T. Koga, J. Nitta, H. Takayanagi, S. Datta, Phys. Rev. Lett. 88 (2002) 126601; K.C. Hall, et al., Appl. Phys. Lett. 83 (2003) 1462.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 1462
    • Hall, K.C.1
  • 15
    • 1542406893 scopus 로고    scopus 로고
    • is 60 times smaller
    • We have used the theoretical value of the gate voltage modulability of the Rashba interaction in InAs/AlAs heterostructures. The experimental value reported in J. Nitta, et al., Phys. Rev. Lett. 78 (1997) 1335 is 60 times smaller.
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 1335
    • Nitta, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.