Evolution in IGBT's protection against short circuit behaviors by gate-side circuitry

IEEE International Symposium on Industrial Electronics

Volumn 3, Issue , 2002, Pages 913-918

  Pagano, R ^a   Raciti, A ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS; INDUSTRIAL ELECTRONICS; OUTAGES; TIMING CIRCUITS;

CIRCUIT BEHAVIORS; FAULT UNDER LOADS; HARD SWITCHING FAULTS; PROTECTION CIRCUITS; PROTECTION FUNCTION; PROTECTION MECHANISMS; SHORT-CIRCUIT FAULT; SHORT-CIRCUIT PROTECTION;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 51849115685     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/isie.2002.1025855     Document Type: Conference Paper

References (6)

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3. B. J. Baliga, Modern Power Devices. New York: Wiley, 1987.
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5. V. John, B.-S. Suh, T. A. Lipo. "Fast-Clamped Short-Circuit Protection of IGBT's," IEEE Transactions on Industn' Applications, March/April 1999, Vol. 35, No. 2, pp. 477-486.
6. R. Letor. G. C. Aniceto, "Short Circuit Behavior of IGBT's Correlated to the Intrinsic Device Structure and on the Application Circuit," IEEE Transactions on Industry Applications, Vol. 31, No. 2, March-April. 1995, pp. 234-239.