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Volumn 2006-January, Issue , 2006, Pages 323-326
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Extrinsic, parasitic capacitance contributions of MOSFETs, their impact on performance, and their modeling
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CIRCUIT SIMULATION;
65-NM TECHNOLOGIES;
DESIGN FLOWS;
INTRINSIC CONTRIBUTION;
LAYOUT DEPENDENTS;
MOSFETS;
PARASITIC CAPACITANCE;
RING OSCILLATOR;
MOSFET DEVICES;
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EID: 51849101230
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/essder.2006.307703 Document Type: Conference Paper |
Times cited : (5)
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References (4)
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