Graphene nanoribbon field-effect transistors

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn , Issue , 2008, Pages 169-172

  Thornhill, Stephen ^a   Wu, Nathanael ^a   Wang, Z F ^b   Shi, Q W ^b   Chen, Jie ^a,c  

^a UNIVERSITY OF ALBERTA   (Canada)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; MESFET DEVICES; NANOSTRUCTURED MATERIALS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TECHNICAL PRESENTATIONS; TRANSISTORS;

BILAYER GRAPHENE; EDGE DEFECTS; INTERNATIONAL SYMPOSIUM; TOPOLOGICAL DEFECTS;

FIELD EFFECT TRANSISTORS;

EID: 51749110697     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2008.4541381     Document Type: Conference Paper

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