Energetic and electronic properties of hydrogen passivated ZnO nanowires

Solid State Communications

Volumn 148, Issue 3-4, 2008, Pages 101-104

  Fan, Wei ^a,b   Rosa, A L ^c   Frauenheim, Th ^c   Zhang, R Q ^a,d  

^a TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c UNIVERSITY OF BREMEN   (Germany)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A. Nanostructures; C. Crystal structure and symmetry; D. Electronic band structure

Indexed keywords

ATOMS; CRYSTAL SYMMETRY; DANGLING BONDS; ELECTRONIC PROPERTIES; ENERGY GAP; II-VI SEMICONDUCTORS; IMPACT IONIZATION; IONS; NANOWIRES; OXYGEN; ZINC OXIDE;

CRYSTAL STRUCTURE AND SYMMETRY; ELECTRONIC BAND STRUCTURE; ENERGETIC AND ELECTRONIC PROPERTIES; HYDROGEN ATOMS; HYDROGEN PASSIVATION; SURFACE OXYGEN; ZINC OXIDE (ZNO); ZNO NANOWIRES;

PASSIVATION;

EID: 51749095949     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.08.003     Document Type: Article

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