Experimental demonstration of 1200V IGBT module for a magnetic energy recovery switch application

IEEJ Transactions on Electronics, Information and Systems

Volumn 128, Issue 4, 2008, Pages

  Takaku, Taku ^a   Iwamuro, Noriyuki ^a   Uchida, Yoshiyuki ^b   Shimada, Ryuichi ^c  

^a Fuji Electric Device Technology Co Ltd   (Japan)

^b Curamik Electronics KK   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Conduction losses; Low frequency switching; Low on state voltage drop device; Magnetic energy recovery switch

Indexed keywords

AC GENERATOR MOTORS; ACTIVE FILTERS; ELECTRIC POWER FACTOR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); VOLTAGE CONTROL;

CONDUCTION LOSS; LOW FREQUENCY; MAGNETIC ENERGIES; MAGNETIC ENERGY RECOVERY SWITCH; ON-STATE VOLTAGE DROP;

SWITCHING;

EID: 51549118376     PISSN: 03854221     EISSN: 13488155     Source Type: Journal    
DOI: 10.1541/ieejeiss.128.677     Document Type: Article

References (7)

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4. Y. Onozawa et al.: "1200V super low loss IGBT with low noise characteristics and high dI/dt controllability", IEEE IAS Annual Meeting, p. 222 (2005)