25 Gbit/s-100 °C operation and high reliability of 1.1-μm-range VCSELs with InGaAs/GaAsP strain-compensated MQWs

2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Volumn , Issue , 2008, Pages

  Hatakeyama, H ^a   Akagawa, T ^a   Fukatsu, K ^a   Suzuki, N ^a   Yashiki, K ^a   Tokutome, K ^a   Anan, T ^a   Tsuji, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM ELECTRONICS; RELIABILITY; SURFACE EMITTING LASERS;

HIGH-RELIABILITY; LASER SCIENCE; STRAIN-COMPENSATED;

LASERS;

EID: 51349145355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEO.2008.4551303     Document Type: Conference Paper

References (4)

1. K. Fukatsu, et al., "30-Gbps Transmission Over 100 m-MMFs (G132) Using 1.1 μn-Range VCSELs and Receivers," in Indium Phosphide and Related Materials (IPRM) 2007, WeB3-4, 2007.
2. K. Yashiki, et al., "1.1-μn-Range Tunnel Junction VCSELs with 27-GHz Relaxation Oscillation Frequency," in Optical Fiber Communication Conference (OFC) 2007, OMK1, 2007.
3. B. Weigl, et al., "High-Performance Oxide-Confined GaAs VCSEL's," IEEE J. Select. Topics Quantum Electron., 3, 409455 (1997).
4. R. A. Morgan et al.,"200 °C. 96-nm Wavelength Range, Continuous-Wave Lasing from Unbonded GaAs MOVPE-Grown Vertical Cavity Surface-Emitting Lasers," Photon. Tech. Lett., vol. 7, no. 5, pp. 441-443, 1995.