Highly sensitive InGaAs/InP photo-FET with wide spectral rang

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 2007, Pages 385-386

  Ogura, Mutsuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; SWITCHING FUNCTIONS;

ANNUAL MEETINGS; ELECTRO-OPTICS; HIGHLY SENSITIVE; INGAAS/INP;

MESFET DEVICES;

EID: 51249100246     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LEOS.2007.4382440     Document Type: Conference Paper

References (1)

1. M.Ogura and T.Sugaya, 'Highly sensitive InGaAs/InAlAs quantum wire photo-FET', ElectronicsLetter 42 (2006) p.413-414.