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Volumn 254, Issue 23, 2008, Pages 7901-7904
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Temperature dependence characterization of metal-insulator-nonuniformly-doped semiconductor solar cell
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Author keywords
Interface states; J V characteristics; MIS solar cell; Nonuniform doping profile; Temperature dependence
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Indexed keywords
ELECTRIC FIELDS;
INTERFACE STATES;
METAL INSULATOR BOUNDARIES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SOLAR CELLS;
TEMPERATURE DISTRIBUTION;
DOPED SEMICONDUCTORS;
INSULATOR-SEMICONDUCTOR INTERFACE;
J-V CHARACTERISTICS;
KINETIC PROPERTIES;
NON-UNIFORM DOPING;
OPERATING TEMPERATURE;
SEMICONDUCTOR LAYERS;
TEMPERATURE DEPENDENCE;
SEMICONDUCTOR DEVICE MODELS;
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EID: 51249096763
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.03.164 Document Type: Article |
Times cited : (3)
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References (19)
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