Analysis of Output Power Degradation for Tunnel Metal-Insulator-Semiconductor Solar Cell

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6339-6345

  Yano, Koji ^a   Shimizu, Azuma ^a,b   Shinoda, Shigeru ^a,c   Kasuga, Masanobu ^a  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b Fuji Electric Corporation ^*  (Japan)

^c FUJI ELECTRIC CO   (Japan)

Author keywords

Device simulation; Interface states; Solar cell; Tunneling MIS structure; Tunneling thermionic emission

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DIFFUSION; FERMI LEVEL; SCHOTTKY BARRIER DIODES; SOLAR CELLS; THERMIONIC EMISSION;

DEVICE SIMULATION; METAL-INSULATOR-SEMICONDUCTOR (MIS) SOLAR CELL;

SEMICONDUCTOR MATERIALS;

EID: 0346959662     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6339     Document Type: Article

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