Development and optimization of porous pSiCOH interconnect dielectrics for 45 nm and beyond

2008 IEEE International Interconnect Technology Conference, IITC

Volumn , Issue , 2008, Pages 28-30

  Grill, A ^a   Gates, S ^a   Dimitrakopoulos, C ^a   Patel, V ^a   Cohen, S ^a   Ostrovski, Y ^a   Liniger, E ^a   Simonyi, E ^a   Restaino, D ^b   Sankaran, S ^b   Reiter, S ^c   Demos, A ^c   Yim, K S ^c   Nguyen, V ^c   Rocha, J ^c   Ho, D ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

Bicycloheptadiene; Dielectric; Diethoxymethylsilane; pSiCOH; Ultralow k

Indexed keywords

COMPUTER NETWORKS; ELECTRIC PROPERTIES;

BICYCLOHEPTADIENE; DIELECTRIC; DIETHOXYMETHYLSILANE; PSICOH; ULTRALOW-K;

OPTIMIZATION;

EID: 51149089948     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2008.4546915     Document Type: Conference Paper

References (10)

1. D. Edelstein et al, Proceedings of IITC 2004 (2004) p 214.
2. A.Grill and V. Patel, Electrochemical Soc. Proc., 2000-5 (2000) p55.
3. A. Grill, D. Edelstein, and V. Patel, AMC 2001. p253.
4. A.Grill, unpublished data.
5. A. Grill, Cold Plasma in Materials Fabrication, Wiley-IEEE Press, Hoboken, NJ, March 2001.
6. A. Grill and D. A. Neumayer, J Appl. Phys., 94, 6697 (2003).
7. S. Gates et al., Proc. AMC 2006, p. 351.
8. S. Sankaran et al., IEDM 2006, paper S13P2.
9. M. Lane et al., J. Mater. Res., 15, (2000). p203.
10. D. Restaino et al., Proc. AMC. 2007, in press.