Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes

Comptes Rendus Chimie

Volumn 11, Issue 9, 2008, Pages 1010-1015

  Girard, Hugues A ^a   Simon, Nathalie ^a   Ballutaud, Dominique ^b   Etcheberry, Arnaud ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Boron doped diamond; Electrochemistry; Flat band potential; Oxygenated terminations; XPS

Indexed keywords

EID: 50949118435     PISSN: 16310748     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.crci.2008.01.014     Document Type: Article

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