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Volumn 29, Issue 4, 2008, Pages 743-746

Solar-blind photodetectors based on MgZnO thin films

Author keywords

MgZnO alloy thin film; Radio frequency magnetron sputtering; Solar blind photodetector

Indexed keywords


EID: 50949086294     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (10)
  • 1
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    • Kuryatkov V V, Borisov B A, Nikishin S A, et al. 247 nm solar-blind ultraviolet p-i-n photodetector [J]. J. Appl. Phys., 2006, 100(9):096104-1-3.
    • Kuryatkov V V, Borisov B A, Nikishin S A, et al. 247 nm solar-blind ultraviolet p-i-n photodetector [J]. J. Appl. Phys., 2006, 100(9):096104-1-3.
  • 2
    • 33845453636 scopus 로고    scopus 로고
    • 200 nm deep ultraviolet photodetectors based on AIN [J, :213610-1-3
    • Li J, Fan Z Y, Dahal R, et al. 200 nm deep ultraviolet photodetectors based on AIN [J]. Appl. Phys. Lett., 2006, 89 (21):213610-1-3.
    • (2006) Appl. Phys. Lett , vol.89 , Issue.21
    • Li, J.1    Fan, Z.Y.2    Dahal, R.3
  • 3
    • 34547274389 scopus 로고    scopus 로고
    • Hybrid AlN-SiC deep ultraviolet Schottky barrier photodetectors [J, :263505-1-3
    • Dahal R, Al Tahtamouni T M, Fan Z Y, et al. Hybrid AlN-SiC deep ultraviolet Schottky barrier photodetectors [J]. Appl. Phys. Lett., 2007, 90(26):263505-1-3.
    • (2007) Appl. Phys. Lett , vol.90 , Issue.26
    • Dahal, R.1    Al Tahtamouni, T.M.2    Fan, Z.Y.3
  • 5
    • 0000189926 scopus 로고    scopus 로고
    • Electrical characterization of 1.8 MeV proton-bombarded ZnO [J]
    • Auret F D, Goodman S A, Hayes M, et al. Electrical characterization of 1.8 MeV proton-bombarded ZnO [J]. J. Appl. Phys. Lett., 2001, 79(19):3074-3076.
    • (2001) J. Appl. Phys. Lett , vol.79 , Issue.19 , pp. 3074-3076
    • Auret, F.D.1    Goodman, S.A.2    Hayes, M.3
  • 6
    • 0038387298 scopus 로고    scopus 로고
    • 1-xO on Si(100) for deep ultraviolet photodetectors [J]
    • 1-xO on Si(100) for deep ultraviolet photodetectors [J]. Appl. Phys. Lett., 2003, 82(20):3424-3426.
    • (2003) Appl. Phys. Lett , vol.82 , Issue.20 , pp. 3424-3426
    • Yang, W.1    Hullavarad, S.S.2    Nagaraj, B.3
  • 7
    • 0035944939 scopus 로고    scopus 로고
    • 1-xO epitaxial heterostructures on Si(100) substrates [J]
    • 1-xO epitaxial heterostructures on Si(100) substrates [J]. Solid State Commun., 2002, 121(1):9-13.
    • (2002) Solid State Commun , vol.121 , Issue.1 , pp. 9-13
    • Narayan, J.1    Sharma, A.K.2    Kvit, A.3
  • 8
    • 0000939615 scopus 로고    scopus 로고
    • 1-xO as a II-VI widegap semiconductor alloy [J]
    • 1-xO as a II-VI widegap semiconductor alloy [J]. Appl. Phys. Lett., 1998, 72(19):2466-2468.
    • (1998) Appl. Phys. Lett , vol.72 , Issue.19 , pp. 2466-2468
    • Ohtomo, A.1    Kawasaki, M.2    Koida, T.3
  • 9
    • 43149119001 scopus 로고    scopus 로고
    • xO thin films grown by ultrasonic spray pyrolysis [J]
    • in Chinese
    • xO thin films grown by ultrasonic spray pyrolysis [J]. Chin. J. Lumin., 2006, 27(4):503-508 (in Chinese).
    • (2006) Chin. J. Lumin , vol.27 , Issue.4 , pp. 503-508
    • Xia, Z.1    Li, X.2    Chen, T.3
  • 10
    • 48949109645 scopus 로고    scopus 로고
    • 1-xO alloy grown by P-MBE and optical properties of MgZnO/ZnO heterostructure [J]
    • in Chinese
    • 1-xO alloy grown by P-MBE and optical properties of MgZnO/ZnO heterostructure [J]. Chin. J. Lumin., 2006, 27(5):831-833 (in Chinese).
    • (2006) Chin. J. Lumin , vol.27 , Issue.5 , pp. 831-833
    • Wei, Z.1    Wu, C.2    Lu, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.